A Low Voltage, High Gain, Fully Differential CMOS Low-Noise Amplifier for Ultra-Wideband Applications

Document Type : Original Article

Abstract

In this paper, a novel fully differential low-noise amplifier (LNA) has been presented for ultra-wideband (UWB)
applications.  The  proposed  LNA  consists  of  a  common-gate  input  stage  to  improve  the  input  impedance
matching and a common source second stage to amplify the input signal while reducing the noise figure (NF). A
shunt-shunt transistor feedback is also applied to add a degree of freedom to the trans-conductance (gm) of the
input stage and to achieve wide bandwidth and high linearity. The proposed LNA is designed and simulated in
the RF-TSMC 0.18 μm CMOS process technology by the Advanced Design System (ADS). The simulation results
show a flat power gain (S21) of 17±0.25 dB, a noise figure less than 2.7 dB, an input (S11) less than -10 dB and
high linearity with input third-order intercept point (IIP3) of -1 dBm, over the frequency band of 4-7 GHz. The
proposed LNA has low power dissipation of 8.5 mW from the 0.75 V power supply.

Keywords

References

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Applied Electromagnetics
Volume 3, Issue 4 - Serial Number 4
January 2016
Pages 47-56

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History

  • Receive Date: 07 February 2017
  • Revise Date: 06 March 2019
  • Accept Date: 19 September 2018
  • Publish Date: 21 January 2016

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