Design of a Low-Noise Amplifier MMIC Using the 0.15μm InGaAs pHEMT Technology for Ka-band Application

Document Type : Original Article

Authors

Electrical Engineering Dep., Hakim Sabzevari University

Abstract

In this paper, a Ka band low-noise amplifier realized in 0.15μm InGaAs pHEMT technology for satellite applications is presented.  The proposed three stages amplifier is designed and simulated using the equivalent circuit model and its layout is studied by full-wave electromagnetic simulation. Full-wave simulation results in the frequency range of 32GHz to 37GHz show a maximum noise figure of 1.8 dB and gain of 20.7 dB with 0.4 dB ripple. Also, the input and output return loss is better than 16 dB and output 1dB gain compression point is equal to 13 dBm. The total area occupied by the final design is 1.6 × 1.3 mm 2. All three amplifier stages have source-degenerated configuration and to realize the impedance matching network whilst reducing the size of LNA, transmission line is used instead of inductors. A parallel LC tank circuit in series with a resistor in biasing network is used to improve the stability in a wide frequency range up to 45GHz.

Keywords

References

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Applied Electromagnetics
Volume 8, Issue 2 - Serial Number 21
December 2021
Pages 81-87

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History

  • Receive Date: 26 March 2020
  • Revise Date: 29 June 2020
  • Accept Date: 26 July 2020
  • Publish Date: 21 November 2020

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