The introduction of a new structure of the InGaAs / Si SACM APD avalanche photodiode for detection at 1550 nm radiation wavelength

Document Type : Original Article

Authors

1 M.Sc., Faculty of Electrical Engineering, University of Science and Technology, Tehran, Iran

2 Associate Professor, Faculty of Electrical Engineering, University of Science and Technology, Tehran, Iran

Abstract

In this paper, an avalanche photodiode (InGaAs/Si SACM APD) for detection at 1550 nm is presented. This detector has a simple structure defined in terms of layers, and its main detection parameters such as the dark current, photocurrent current, gain and responsivity are optimized. The advantage and distinction of this detector is that its bias voltage is smaller than the models available in the references and its detection parameters can compete with them. This bias voltage is at least 41% lower than other comparative references in similar conditions. In the index (0.9V_br), the photocurrent is8.3 u A and the dark current is 4.9 nA. At a bias voltage of 25 volts, the 51 u A photocurrent and the 21 nA dark current increase, compared to the same photodiode. This detector can also be used for special applications that require a very low dark current.

Keywords

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History

  • Receive Date: 13 February 2021
  • Revise Date: 10 August 2021
  • Accept Date: 04 September 2021
  • Publish Date: 21 March 2022

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