The Presentation of a Low Noise UWB Amplifier Using an Inverter with Inductive Peaking Technique

Document Type : Original Article

Authors

1 Assistant Professor, Qom University of Technology, Qom, Iran

2 Assistant Professor, Department of Telecommunications and Electronics, Faculty of Electrical and Computer Engineering, Qom University of Technology, Qom, Iran

3 M.Sc., Qom University of Technology, Qom, Iran

Abstract

In this paper, a 3.1 to 10.6 GHz low noise amplifier is designed using the 130 nm CMOS technology. In this circuit, the source degeneration technique is employed to increase the bandwidth and achieve input impedance matching. In addition, a current reuse technique is employed to achieve a high gain. Since most output impedance matching techniques degrade the gain or linearity, an inverter along with an inductive peaking technique is used to provide the output impedance matching of 50 ohms and to improve both the linearity and gain. This technique enhances the third harmonic behavior and increases the gain by 2.7 dB. The proposed circuit achieves S11 of less than - 9.1dB, S22 of less than -10 dB, the maximum gain of 19.7 dB, NF of 2 to 2.7 dB, and IIP3 of -3.5 dBm. Moreover, the power consumption of the proposed circuit is 28 mw and the core layout size is 991.84 μm×701.4 μm. The advantages of the proposed circuit over UWB structures with the same technology are higher gain, lower noise figure (NF), and better output matching.

Keywords

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References

[1]   F. Bruccoleri, E. A. M. Klumperink, and B. Nauta, “Wide band CMOS low-noise amplifier exploiting thermal noise canceling,” IEEE Journal of Solid-State Circuits, vol. 39, no. 2, pp. 275-282, 2004.
[2]   Z.  Chang and W. M. C. Sansen, “Low-noise wide-band amplifiers in bipolar and CMOS technologies,” The Springer International Series in Engineering and Computer Science, US, 1991.
[3] B. Razavi, “RF microelectronics,” Communications Engineering and Emerging Technologies Series, Prentice Hall Press, NJ, USA ” 2nd Ed., 2011.
[4] M. Takbiri, A. Bijari, and S. M. Razavi, “A low voltage, high gain, fully differential CMOS low-noise amplifier for ultra-wideband applications,” Scientific Journal of Applied Electromagnetics, vol. 3, no. 4, pp. 47-56, 2017 (In Persian).
[5] A. Liscidini, M. Brandolini, D. Sanzogni, and R. Castello, “A 0.13μm CMOS front-end, for DCS1800/UMTS/802.11b-g with multiband positive feedback low-noise amplifier,” IEEE J. Solid-State Circuits, vol. 41, pp. 981–989, 2006.
[6]  W. H.  Chen, G. Liu, B. Zdravko, and A. M. Niknejad, “A highly linear broadband CMOS LNA employing noise and distortion cancellation,” IEEE J. Solid-State Circuits, vol. 43, pp. 1164–1176, 2008.
[7]  P. Heydari, “Design and analysis of a performance-optimized CMOS UWB distributed LNA,” IEEE J. Solid-State Circuits, vol. 42, pp. 1892–1905, 2007.
[8]  F. Zhang  and P. R. Kinget, “Low-power programmable gain CMOS distributed LNA,” IEEE J. Solid-State Circuits, vol. 41, pp. 1333–1343, 2007.
[9]  B. G. Perumana, J. H. C. Zhan, S. S. Taylor, B.R. Carlton, and J. Laskar, “Resistive-feedback CMOS low-noise amplifiers for multiband applications,” IEEE Trans.Microw. Theory Tech., vol. 56, pp. 1218–1225, 2008.
[10] Y. C. Chen and S. S. Lu, “Analysis and design of CMOS broadband amplifier with dual feedback loops,”  IEEE ASIA-PACIFIC conference proceedings, pp. 245-248, Taipei, Taiwan, 2002.
[11] C. H. Wu, C. H. Lee, W. S. Chen, and S. I. Liu, “CMOS wideband amplifiers using multiple inductive-sereis peaking technique,” IEEE J. Solid-State Circuits, vol. 40, no. 2, pp. 548–552, 2005.
[12] A. Parssinen, S. Lindfors, J. Ryynanen, S. I. Long, and K. Halonen, “1.8 GHz CMOS LNA with on-chip DC-coupling for a subsampling direct conversion front-end,”  ISCAS Proceedings of IEEE International Symposium on Circuits and Systems, vol. 2, pp. 
73-76, 1998. 
[13] D. Malathi and M. Gomathi, “Design of inductively degenerated common source RF CMOS low noise amplifier,”  Sādhanā 44, vol. 4, 2019.
[14] H. Y. Chen, G. W. Huang, K. M. Chen, and C. Y. Chang, “Noise parameters computation of microwave devices using genetic algorithms,” IEICE Transactions on Electronics, 2005.
[15] T. C. Carusons, D. Johns, and K. Martin, “Analog integrated circuit design,” John Wiley & Sons, Inc. New York, 2nd Ed., 2011.
[16] M. Hayati, S. Cheraghaliei, and S. Zarghami, “Design of UWB low noise amplifier using noise canceling and current-reused techniques,” Integration, vol. 60, pp.232- 239, 2018.
[17] N. Salehi, M. Bekrani, H. Zayyani, and M. M. Taskhiri, “A fully Differential Ultra Wideband Common-Gate Low Noise Amplifier,”Electronics Industries, vol. 10, no. 3, Autumn 2019, pp. 43-58, (In Persian).
[18] Y. S. Lin, C. C. Wang, G. L. Lee, and C. C. Chen, “High-performance wideband low-noise amplifier using enhanced π-match input network,” IEEE Microwave and Wireless Components Letters, vol. 24, pp. 200–202, 2014.
[19] Q. Li  and Y. P. Zhang, “A 2–9.6 GHz inductor -less low-noise amplifier in 0.13 μm CMOS,” IEEE Transactions on Microwave Theory and Techniques, vol. 55, no. 10, pp. 2015-2023, 2010.
[20] C. H. Cheong, N. M. Noh, and H. Ramiah, “A wideband Low Noise Amplifier for cognitive radio in 0.13 μm CMOS,” in International SoC Design Conference (ISOCC), pp. 326-328, 2013.
[21] H.  Rastegar  and  J.  Y.  Ryu, “A broadband low noise amplifier with built-in linearizer in 0.13-μm CMOS process,” Microelectronics Journal, vol. 46, 2015.
[22] S. Arshad, R. Ramzan, K. Muhammad, and Q. U. Wahab, “A sub-10 mW, noise cancelling, wideband LNA for UWB applications,” AEU - International Journal of Electronics and Communications, vol. 69, no. 1, pp. 109-118, 2015.
[23] N. Li, W. Feng, and X. Li, “A CMOS 3–12 GHz ultrawideband low noise amplifier by dual-resonance network,” IEEE Microwave and Wireless Components Letters, vol. 27, pp. 383- 385, 2017.
[24] A. Zokaei, K. El-Sankary, D. Trukhachev, and A. Amirabadi, “A dual feedback wideband differential low noise amplifier in l30 nm CMOS process,” 26th International Conference on Mixed Design of Integrated Circuits and Systems, Rzeszów, Poland, pp. 137-140, 2019.
[25] C. Cao, et al. “A triple-cascode X-band LNA design with modified post-distortion network,” Electronics, vol. 10, no. 5, 2021.
[26] M. A. Roein, “Design and analysis of a 3.1–10.6 GHz UWB low noise amplifier with current reused technique,” 5th Conference on Knowledge Based Engineering and Innovation (KBEI), Tehran, Iran, 
pp. 030-035, 2019.
[27] H. Zhou, Y. Zhang, and Y. Yu, “Ultra-wideband low noise amplifier employing noise cancelling and simultaneous input and noise matching technique,” IEICE Electronics Express, vol. 16, no. 11, p. 20190274, 2019.
[28] S. Manjula, M. Malleshwari, and M. Suganthy, “Design of low power UWB CMOS low noise amplifier using active inductor for WLAN receiver,” International Journal of Engineering and Technology (UAE), vol. 7, pp. 448-450, 2018.
[29] H. Khosravi, M. Sheikhi, A. Bijari and N. Kandalaft, “3.5-9 GHz ultra-wideband LNA with variable gain and noise cancellation for wireless communication,” 10th Annual Computing and Communication Workshop and Conference (CCWC), pp. 0396-0401, 2020.

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History

  • Receive Date: 01 September 2021
  • Revise Date: 05 March 2022
  • Accept Date: 19 January 2022
  • Publish Date: 21 March 2022

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