تقویت‏کننده کم‏نویز تمام‏تفاضلی CMOS با سطح منبع تغذیه پایین و بهره توان بالا برای کاربردهای فراپهن‏باند

نوع مقاله : مقاله پژوهشی

نویسندگان

دانشگاه بیرجند

چکیده

در این مقاله یک تقویت‏کننده کم‏نویز تمام‏تفاضلی جدید برای کاربردهای فراپهن‏باند ارائه شده است. تقویت‏کننده پیشنهادشده شامل طبقه‏ی ورودی گیت‏مشترک برای بهبود تطبیق امپدانس و طبقه دوم سورس مشترک برای افزایش بهره و کاهش نویز تقویت‏کننده است. همچنین از فیدبک ترانزیستوری موازی-موازی برای افزودن درجه آزادی در انتخاب ترارسانایی ترانزیستور ورودی و بهبود پهنای باند و خطسانی استفاده شده است. تقویت‏کننده کم‏نویز پیشنهادشده بر اساس فنّاوری µm 18/0 CMOS RF-TSMC طراحی و با استفاده از نرم‏افزار ADS شبیه‏سازی شده است. این تقویت‏کننده در پهنای باند GHz 7-4، دارای بهره توان مسطح (S21) dB 25/0± 17، عدد نویز کمتر از dB 7/2، تلفات بازگشتی ورودی (S11) کمتر از dB 10- و خط­سانی (IIP3) dBm 1- است. توان مصرفی آن نیز mW 5/8 از منبع تغذیه V 75/0 است. ‌

کلیدواژه‌ها


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