طراحی یک تقویت‌کننده کم نویز یکپارچه در باند Ka با استفاده از فناوری µm InGaAs pHEMT 15/0

نوع مقاله : مقاله پژوهشی

نویسندگان

دانشکده مهندسی برق و کامپیوتر، دانشگاه حکیم سبزواری

چکیده

در این مقاله، یک تقویت­کننده کم نویز در باند Ka به‌صورت یکپارچه با استفاده از فناوری µm InGaAs pHEMT 15/0 برای کاربرد در گیرنده­های ماهواره­ای ارائه می­گردد. این تقویت­کننده که متشکل از سه‌طبقه می­باشد پس از طراحی و شبیه­سازی، جانمایی شده و به‌صورت تمام موج شبیه­سازی شده است. حداکثر عدد نویز تقویت­کننده در بازه فرکانسی GHz 32 تا GHz 37 برابر با dB 8/1 و محدوده تغییرات بهره برابر dB 4/0 ± 7/20 به‌دست آمده است. میزان تلفات بازگشتی در ورودی و خروجی نیز بهتر از dB 16 و نقطه فشردگی بهره dB 1 در خروجی برابر با dBm 13 حاصل شده است. مساحت کل اشغال‌شده طرح نهایی برابر با mm2 3/1 × 6/1 می­باشد. تقویت­کننده­های طبقات مختلف از نوع سورس مشترک با پیکربندی source degenerated بوده و تلاش شده است تا حد امکان تطبیق امپدانس با استفاده از خط انتقال بجای سلف پیاده­سازی شود. پایداری مدار نیز در بازه فرکانسی وسیع تاGHz  45 برآورده شده که برای بهبود آن از یک مقاومت و مدار تشدید موازی در مسیر تغذیه کمک گرفته شده است.

کلیدواژه‌ها


عنوان مقاله [English]

Design of a Low-Noise Amplifier MMIC Using the 0.15μm InGaAs pHEMT Technology for Ka-band Application

نویسندگان [English]

  • Amir Bionghy
  • Majid Baghaei Nejad
  • Morteza Rezaee
Electrical Engineering Dep., Hakim Sabzevari University
چکیده [English]

In this paper, a Ka band low-noise amplifier realized in 0.15μm InGaAs pHEMT technology for satellite applications is presented.  The proposed three stages amplifier is designed and simulated using the equivalent circuit model and its layout is studied by full-wave electromagnetic simulation. Full-wave simulation results in the frequency range of 32GHz to 37GHz show a maximum noise figure of 1.8 dB and gain of 20.7 dB with 0.4 dB ripple. Also, the input and output return loss is better than 16 dB and output 1dB gain compression point is equal to 13 dBm. The total area occupied by the final design is 1.6 × 1.3 mm 2. All three amplifier stages have source-degenerated configuration and to realize the impedance matching network whilst reducing the size of LNA, transmission line is used instead of inductors. A parallel LC tank circuit in series with a resistor in biasing network is used to improve the stability in a wide frequency range up to 45GHz.

کلیدواژه‌ها [English]

  • Satellite Receiver
  • Low Noise Amplifier
  • Ka Band
  • GaAs HEMT Technology
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